Semiconductor Device and Failure Analysis Semiconductor Device and Failure Analysis The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference: * Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability. * Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM * Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors. Not only an essential reference for researchers and students in the field, the numerous practical examples throughout the text also make this an indispensible guide for failure analysis engineers and microelectrics industry professionals. John Wiley & Sons, Inc 978-0-471-49240-5
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Russian
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Semiconductor Device and Failure Analysis

  • Твердый переплет. Плотная бумага или картон
  • Издательство: John Wiley & Sons, Inc
  • Кол. страниц: 288
  • ISBN: 978-0-471-49240-5
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The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference:
* Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability.
* Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM
* Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors.
Not only an essential reference for researchers and students in the field, the numerous practical examples throughout the text also make this an indispensible guide for failure analysis engineers and microelectrics industry professionals.

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Preface.

Introduction.

Theory of Light Emission in Semiconductors.

Instrumentation Aspects of the Photon Emission Microscope.

Backside Photon Emission Microscopy.

Spectroscopic Photon Emission Microscopy.

Photon Emission from Metal-Oxide-Semiconductor Field-Effect Transistors under Hot-Carrier Stressing.

Photon Emission from Metal-Oxide-Semiconductor Field-Effect Transistors under High-Field Impulse Stressing.

Oxide Degradation and Photon Emission from Metal-Oxide Semiconductor Capacitor Structures.

Index.
Штрихкод:   9780471492405
Язык:   Английский
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